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1

Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

H. Gleskova, S. Wagner, V. Gašparı́k, P. Kováč

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 128 KB

english, 2001

2

Electrical response of amorphous silicon thin-film transistors under mechanical strain

Gleskova, H., Wagner, S., Soboyejo, W., Suo, Z.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 393 KB

english, 2002

3

Direct Writing and Lift-Off Patterning of Copper Lines at 200°C Maximum Process Temperature

Hong, C. M., Gleskova, H., Wagner, S.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 1.41 MB

english, 1997

4

High-Performance Vertical Organic Electrochemical Transistors

Donahue, Mary J., Williamson, Adam, Strakosas, Xenofon, Friedlein, Jacob T., McLeod, Robert R., Gleskova, Helena, Malliaras, George G.

Journal:

Advanced Materials

Year:

2017

Language:

english

File:

PDF, 787 KB

english, 2017

5

Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

Hannah, Stuart, Davidson, Alan, Glesk, Ivan, Uttamchandani, Deepak, Dahiya, Ravinder, Gleskova, Helena

Journal:

Organic Electronics

Year:

2018

Language:

english

File:

PDF, 1.35 MB

english, 2018

6

On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

Emil Pinčík, Hikaru Kobayashi, Rudolf Hajossy, Helena Glesková, Masao Takahashi, Matej Jergel, Róbert Brunner, Luc Ortega, Michal Kučera, Martin Kráľ, Jaroslav Rusnák

Journal:

Applied Surface Science

Year:

2007

Language:

english

File:

PDF, 1.68 MB

english, 2007

7

Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

E. Pinčı́k, H. Kobayashi, M. Takahashi, N. Fujiwara, R. Brunner, H. Glesková, M. Jergel, J. Müllerová, M. Kučera, C. Falcony, L. Ortega, J. Rusnák, M. Mikula, M. Zahoran, R. Juráni, M. Král

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 330 KB

english, 2004

8

Mechanics of thin-film transistors and solar cells on flexible substrates

Helena Gleskova, I-Chun Cheng, Sigurd Wagner, James C. Sturm, Zhigang Suo

Journal:

Year:

2006

Language:

english

File:

PDF, 267 KB

english, 2006

9

Photoluminescence properties of a-Si:H based thin films and corresponding solar cells

E. Pinčı́k, H. Kobayashi, H. Glesková, M. Kučera, L. Ortega, M. Jergel, C. Falcony, R. Brunner, T. Shimizu, V. Nádaždy, M. Zeman, M. Mikula, M. Kumeda, R.A.C.M.M. van Swaaij

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 226 KB

english, 2003

10

Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles

E Pinčı́k, H Glesková, J Müllerová, V Nádaždy, S Mráz, L Ortega, M Jergel, C Falcony, R Brunner, K Gmucová, M Zeman, R.A.C.M.M van Swaaij, M KuČera, R Juráni, M Zahoran

Journal:

Year:

2002

Language:

english

File:

PDF, 274 KB

english, 2002

11

Low-energy argon ion beam treatment of a-Si:H/Si structure

E. Pinčı&amp, #x0301, k, M. Jergel, K. Gmucová, H. Glesková, M. Kučera, J. Müllerová, M. Brunel, M. Mikula

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 133 KB

english, 2000

12

Silicon for thin-film transistors

Sigurd Wagner, Helena Gleskova, I-Chun Cheng, Ming Wu

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 130 KB

english, 2003

13

CO2-laser annealing of Al/a-Si:H contact

H. Glesková, V. V. Il'chenko, V. A. Skryshevsky, V. I. Strikha

Journal:

Czechoslovak Journal of Physics

Year:

1993

Language:

english

File:

PDF, 475 KB

english, 1993

14

The Au-SiOx-a-Si:H structures with very thin anodic oxide layers

V. A. Skryshevsky, V. I. Strikha, H. Glesková

Journal:

Czechoslovak Journal of Physics

Year:

1992

Language:

english

File:

PDF, 364 KB

english, 1992

15

Modeling of gate line delay in very large active matrix liquid crystal displays

Qing Zhang, Shen, D.S., Gleskova, H., Wagner, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 85 KB

english, 1998

16

DC-gate-bias stressing of a-Si:H TFTs fabricated at 150°C on polyimide foil

Gleskova, H., Wagner, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 120 KB

english, 2001

17

Effects of mechanical strain on TFTs on spherical domes

Hsu, P.I., Huang, M., Gleskova, H., Xi, Z., Suo, Z., Wagner, S., Sturm, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 252 KB

english, 2004

18

Active-Matrix Amorphous-Silicon TFTs Arrays at 180 on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays

Long, K., Kattamis, A.Z., Cheng, I.-C., Gleskova, H., Wagner, S., Sturm, J.C., Stevenson, M., Yu, G., O'Regan, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 833 KB

english, 2006

19

Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

H. Gleskova, J.N. Bullock, S. Wagner

Journal:

Journal of Non-Crystalline Solids

Year:

1993

Language:

english

File:

PDF, 329 KB

english, 1993

20

Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Helena Gleskova, Sigurd Wagner

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 439 KB

english, 1995

21

Equilibration and stability in undoped amorphous silicon

Sigurd Wagner, Helena Gleskova, Jun-ichi Nakata

Journal:

Journal of Non-Crystalline Solids

Year:

1996

Language:

english

File:

PDF, 780 KB

english, 1996

22

On the lack of observable light-induced H diffusion near room temperature

Howard M. Branz, John Bullock, Sally Asher, Helena Gleskova, Sigurd Wagner

Journal:

Journal of Non-Crystalline Solids

Year:

1996

Language:

english

File:

PDF, 386 KB

english, 1996

23

Field-effect mobility of amorphous silicon thin-film transistors under strain

H. Gleskova, P.I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, S. Wagner

Journal:

Journal of Non-Crystalline Solids

Year:

2004

Language:

english

File:

PDF, 270 KB

english, 2004

24

Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils

Helena Gleskova, Sigurd Wagner

Journal:

Journal of Non-Crystalline Solids

Year:

2008

Language:

english

File:

PDF, 212 KB

english, 2008

25

Amorphous Si TFTs on plastically deformed spherical domes

P.I Hsu, H Gleskova, M Huang, Z Suo, S Wagner, J.C Sturm

Journal:

Journal of Non-Crystalline Solids

Year:

2002

Language:

english

File:

PDF, 492 KB

english, 2002

26

Photoresist-free fabrication process for a-Si:H thin film transistors

H Gleskova, S Wagner, D.S Shen

Journal:

Journal of Non-Crystalline Solids

Year:

1998

Language:

english

File:

PDF, 242 KB

english, 1998

27

a-Si:H thin film transistors after very high strain

H Gleskova, S Wagner, Z Suo

Journal:

Journal of Non-Crystalline Solids

Year:

2000

Language:

english

File:

PDF, 226 KB

english, 2000

28

Electrophotographically printed insulator

Helena Gleskova, Sigurd Wagner

Journal:

Materials Letters

Year:

2002

Language:

english

File:

PDF, 60 KB

english, 2002

29

Reversibility of the light-induced saturation and annealing of defects in a-Si: H

H. Gleskova, P.A. Morin, J. Bullock, S. Wagner

Journal:

Materials Letters

Year:

1992

Language:

english

File:

PDF, 482 KB

english, 1992

30

Properties of Au/SiO2/a-Si:H solar cells with wet oxide

H. Gleskova, V.A. Skryshevsky, J.N. Bullock, S. Wagner, J. Stuchlík

Journal:

Materials Letters

Year:

1993

Language:

english

File:

PDF, 375 KB

english, 1993

31

Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Krishna Chytanya Chinnam, Swati Gupta, Helena Gleskova

Journal:

Journal of Non-Crystalline Solids

Year:

2012

Language:

english

File:

PDF, 604 KB

english, 2012

32

Amorphous-silicon thin-film transistors made at 280°C on clear-plastic substrates by interfacial stress engineering

Ke Long, I-Chun Cheng, Alexis Kattamis, Helena Gleskova, Sigurd Wagner, James C. Sturm

Journal:

Journal of the Society for Information Display

Year:

2007

Language:

english

File:

PDF, 1.87 MB

english, 2007

33

Effect of substrate temperature on vapor-phase self-assembly of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Gupta, S., Šutta, P., Lamprou, D.A., Gleskova, H.

Journal:

Organic Electronics

Year:

2013

Language:

english

File:

PDF, 944 KB

english, 2013

34

Structural changes in vapour-assembled n-octylphosphonic acid monolayer with post-deposition annealing: Correlation with bias-induced transistor instability

Gleskova, H., Gupta, S., Šutta, P.

Journal:

Organic Electronics

Year:

2013

Language:

english

File:

PDF, 478 KB

english, 2013

35

Field-effect mobility of amorphous silicon thin-film transistors under strain

Journal:

Journal of Non-Crystalline Solids

Year:

2004

Language:

english

File:

PDF, 270 KB

english, 2004

36

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

Gupta, S., Gleskova, H.

Journal:

Organic Electronics

Year:

2013

Language:

english

File:

PDF, 730 KB

english, 2013

37

Regulation of c-jun gene expression by tumor necrosis factor

Gupta, S., Gleskova, H.

Journal:

Year:

1989

Language:

english

File:

PDF, 167 KB

english, 1989

38

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Overlay Alignment in a-Si:H TFTs Fabricated on Foil Substrates

Gleskova, Helena, Cheng, I-Chun, Kattamis, Alexis Z., Wagner, Sigurd, Suo, Zhigang

Year:

2006

Language:

english

File:

PDF, 67 KB

english, 2006

39

Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability

A. Z. Kattamis, K. H. Cherenack, B. Hekmatshoar, I. Cheng, H. Gleskova, J. C. Sturm, S. Wagner

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

40

Conducting Nanofibers and Organogels Derived from the Self-Assembly of Tetrathiafulvalene-Appended Dipeptides

Nalluri, Siva Krishna Mohan, Shivarova, Nadezhda, Kanibolotsky, Alexander L., Zelzer, Mischa, Gupta, Swati, Frederix, Pim W. J. M., Skabara, Peter J., Gleskova, Helena, Ulijn, Rein V.

Journal:

Year:

2014

Language:

english

File:

PDF, 1.20 MB

english, 2014

41

Via hole technology for thin-film transistor circuits

Gleskova, H., Wagner, S., Zhang, Q., Shen, D.S.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 77 KB

english, 1997

42

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C

Long, K., Kattamis, A.Z., Cheng, I.-C., Gleskova, H., Wagner, S., Sturm, J.C.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 137 KB

english, 2006

43

Electrophotographic patterning of thin-film silicon on glass foil

Gleskova, H., Wagner, S., Shen, D.S.

Journal:

IEEE Electron Device Letters

Year:

1995

Language:

english

File:

PDF, 390 KB

english, 1995

44

Electrographically patterned thin-film silicon transistors

Gleskova, H., Konenkamp, R., Wagner, S., Chen, D.S.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 498 KB

english, 1996

45

[IEEE Device Research Conference. Conference Digest - Notre Dame, IN, USA (25-27 June 2001)] Device Research Conference. Conference Digest (Cat. No.01TH8561) - Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

Hsu, P.I., Gleskova, H., Suo, Z., Wagner, S., Sturm, J.C.

Year:

2001

Language:

english

File:

PDF, 166 KB

english, 2001

46

Failure resistance of amorphous silicon transistors under extreme in-plane strain

H. Gleskova, S. Wagner, Z. Suo

Year:

1999

Language:

english

File:

PDF, 375 KB

english, 1999

47

Paper No P39: Optimizing the Deposition Rate of Vacuum-Grown n-Octylphosphonic acid Monolayer for Low-Voltage Thin-Film Transistors

Gupta, S., Gleskova, H.

Journal:

SID Symposium Digest of Technical Papers

Year:

2013

Language:

english

File:

PDF, 379 KB

english, 2013

48

Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination

Gleskova, H., Morin, P. A., Wagner, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 597 KB

english, 1993

49

Light-induced D diffusion measurements in hydrogenated amorphous silicon: Testing H metastability models

Branz, Howard M., Asher, Sally, Gleskova, Helena, Wagner, Sigurd

Journal:

Physical Review B

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

50

Thin-film transistor circuits on large-area spherical surfaces

P. I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, J. C. Sturm

Year:

2002

Language:

english

File:

PDF, 472 KB

english, 2002